What are TRAPATT and IMPATT diode?

TRAPATT. A microwave oscillator device with a similar structure to the IMPATT diode is the TRAPATT diode, which stands for “trapped plasma avalanche triggered transit”. This mode of operation produces relatively high power and efficiency, but at lower frequency than a device operated in IMPATT mode.

What is a TRAPATT diode how is it better than IMPATT diode?

However, TRAPATT diode has a number of advantages and also a number of applications. Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%.

Why is the operating frequency of TRAPATT diode lower than IMPATT diode?

As the TRAPATT diode is biased beyond its breakdown point, the current density is larger than that for an IMPATT. This decreases the field in the space charge region and increases the transit time. As a result the frequency of operation is typically below about 10 GHz.

What is TRAPATT diode in microwave?

TRAPATT Diode. The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. A microwave generator which operates between hundreds of MHz to GHz. These are high peak power diodes usually n+- p-p+ or p+-n-n+ structures with n-type depletion region, width varying from 2.5 to 1.25 µm.

How does an IMPATT diode work?

The IMPATT microwave diode uses avalanche breakdown combined and the charge carrier transit time to create a negative resistance region which enables it to act as an oscillator. As the nature of the avalanche breakdown is very noisy, and signals created by an IMPATT diode have high levels of phase noise.

What is the full form and application of IMPATT diodes?

What is IMPATT Diode? The full form of IMPATT diode is IMPatt ionization Avalanche Transit-Time. This is an extremely high-power diode used in microwave applications. Generally, it is used as an amplifier and oscillator at microwave frequencies. The operating frequency range of the IMPATT diode ranges from 3 – 100 GHz.

How does IMPATT diode work?

Which diode is used to overcome IMPATT diode?

The major difference between IMPATT diode and BARITT diode is as follows. ➨In BARITT diode, drift of minority carriers is due to “Thermionic emission” rather than “Avalanche effect” used in IMPATT diode. As a result BARITT diodes are less noisy compare to IMPATT diode.

What are the disadvantages of TRAPATT?

Drawbacks or disadvantages of TRAPATT diode Following are the disadvantages of TRAPATT diode: ➨It is not used for continuous operation mode as it offers high power densities i.e. 10 to 102 W/m2. ➨It has very high noise figure which is about 60 dB. ➨It supports frequencies below millimeter band.

What is basic structure of IMPATT diode?

IMPATT diode structure basics The structures are all basic variations of the PN junction although often an intrinsic layer is placed between the P type and N type regions. The IMPATT diode structures are designed for optimum operation in reverse bias so that avalanche multiplication occurs within the high field region.

What is the principle of IMPATT diode?